S频段pHEMT双通道低噪声放大器芯片的设计  

Design of S Band Dual Channel LNA Chip with pHEMT Technology

作　　者：徐鑫[1] 张波[1] 徐辉[1] 王毅[1] 

机构地区：[1]中国空间技术研究院西安分院,西安710100

出　　处：《微波学报》2015年第1期83-87,共5页Journal of Microwaves

摘　　要：采用GaAs 0.13μmp HEMT MMIC流片工艺设计和制作了一种S频段双通道低噪声放大器芯片,芯片内部集成了两个低噪声放大器通道、一级单刀双掷(SPDT)开关和一个晶体管-晶体管逻辑(TTL)电平转换电路。低噪声放大器电路采用一级共源共栅场效应管(Cascode FET)结构实现,使其具有比单管更高的增益,简化了芯片拓扑,降低了芯片设计难度。经流片测试,在1.9~2.1GHz的工作频带内,芯片噪声系数优于1.4dB,增益大于22.5dB,输入驻波优于1.8,输出驻波优于1.4,输出1dB压缩点(P1dB)为10dBm。大量芯片样本在片测试统计数据表明该低噪声放大器成品率大于90%,性能指标优于目前同类商业芯片指标。An S band dual channel low noise amplifier chip has been developed with Ga As 0.13μm p HEMT MMIC manufacture process.The low noise amplifier chip includes two low noise amplifier channels,one single pole double throw(SPDT) switch and one transistor-transistor logic(TTL) level shifter.The low noise amplifier circuit uses a cascode FET structure to achieve the required level of noise and gain.The chip was fabricated and measured.The results show that the noise figure is better than 1.4dB,gain exceeds 22.5dB,input VSWR and output VSWR are better than 1.8 and 1.4 respectively,and achieved 10dBm output(P1dB) at the operation bandwidth between 1.9GHz and 2.1GHz.With large amount simple measurements,it shows that the low noise amplifier has achieved a high yield over 90%,and has a better performance than current commercial products.

关 键 词：S频段 双通道 低噪声放大器 单刀双掷开关 共源共栅场效应管 

分 类 号：TN722.3[电子电信—电路与系统]