基于X参数晶体管模型的宽带功率放大器设计  

Broadband Power Amplifier Design Based on X-Parameters Transistor Model

作　　者：周丹[1] 南敬昌[1] 

机构地区：[1]辽宁工程技术大学电子与信息工程学院,葫芦岛125105

出　　处：《微波学报》2015年第2期82-85,90,共5页Journal of Microwaves

基　　金：国家自然科学基金(61372058);辽宁省高等学校优秀科技人才支持计划(LR2013012);辽宁工程技术大学研究生科研资助项目(5B2014032)

摘　　要：针对射频非线性行为建模技术,提出了一种与负载无关的晶体管X参数提取方法,并利用晶体管模型进行功率放大器设计。该方法在传统X参数提取过程中引入负载牵引技术,通过迭代获得与负载无关的晶体管X参数模型及其最佳负载阻值。与负载相关的X参数模型相比,该模型适用于分析设计电路,数据量小,步骤简单且周期短。将提取的X参数模型应用于宽带功率放大器设计,匹配网络采用切比雪夫低通滤波器形式,实测与仿真对比表明:在工作频带内,输出功率均大于4W,功率附加效率都超过45%,增益在14d B左右。由此验证所提出方法的有效性。Aim at radio frequency nonlinear behavior modeling technology,this paper proposes a new load-independent X-parameters extraction method of transistor model,and designs power amplifier using this transistor model. The method combines the traditional X-parameter extraction with load-pull technology,and then uses iteration to obtain load-independent transistor X-parameters model and the optimum load impedance. Comparing with load-dependent X-parameter model,this model is more applicable to circuit analysis and design. It has small data volume and the steps are simple with short time.The model is applied to broadband power amplifier design,using Chebyshev low-pass impedance transformation,matching network is designed. Measured results and simulation results show that: across the frequency band,both output powers are more than 4W with 14 d B power gain and 45% PAE. So the X-parameter extraction method is proved to be correct.

关 键 词：与负载无关的X参数 晶体管模型 负载牵引 宽带功放设计 

分 类 号：TN722.75[电子电信—电路与系统]