700VVDMOS终端失效分析与优化设计  

Failure Analysis and Optimum Design of 700 V VDMOS Termination

作　　者：干红林 冯全源[1] 王丹[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《微电子学与计算机》2015年第3期86-89,93,共5页Microelectronics & Computer

基　　金：国家自然科学基金项目(61271090);国家高技术研究发展计划("八六三"计划)重大项目(2012AA012305)

摘　　要：通过电测、微光显微镜(EMMI)漏电流定位和扫描电子显微镜(SEM)形貌分析等手段,对一款700V垂直双扩散金属氧化物半导体(VDMOS)器件进行失效分析(FA).基于Sentaurus TCAD仿真平台进行验证,找到击穿电压失效的主要原因.在改进终端结构的过程中,通过对电流密度、电场、静电势和空间电荷等仿真模型的分析,进一步发现造成耐压不足的场板(FP)结构问题,并提出有效的改进办法.最终,经过优化得到一款耐压770V、硅表面电场分布均匀可靠的终端结构.By means of electrical tests,emission microscopy(EMMI)leakage current location and scanning electron microscope(SEM) morphology analysis,failure analysis to a 700 V vertical double-diffused metal oxide semiconductor(VDMOS)device was done.Based on the Sentaurus TCAD simulation platform to do failure verification,the main failure reason of the breakdown voltage was found.During the process of improving the termination structure,through analyzing the current density,electric field,electrostatic potential and space charge models of the termination structure,field plates(FP)problems that results in shortage of breakdown voltage were further discovered and an effective improvement was presented.Finally,after optimization,a reliable termination with a 770 Vbreakdown voltage and fairly uniform silicon surface electric field was obtained.

关 键 词：垂直双扩散金属氧化物半导体器件 失效分析 微光显微镜 终端结构 

分 类 号：TN386[电子电信—物理电子学]