嵌入式存储器修复技术研究  

Research on the Repair Technology of Embedded Memory

作　　者：杨斌[1] 王小力[1] 李栋[1] 

机构地区：[1]西安交通大学电信学院,陕西西安710049

出　　处：《微电子学与计算机》2015年第5期63-67,共5页Microelectronics & Computer

基　　金：国家自然科学基金(91123918)

摘　　要：为了克服嵌入式存储器故障对整个SOC系统的影响,采用基于存储冗余单元的嵌入式存储器软修复技术.针对软修复技术修复符号信息易丢失的缺点,使用e-fuse box保存修复信息的硬修复技术.通过比较separated fuse-box与centralized fuse-box电路结构的优缺点,提出了含有reg_bank模块的centralized fuse-box电路结构,从而节省了芯片的面积,提高了解压缩修复的速度.实验证明,该fuse-box结构所占芯片面积相对separated fuse-box结构所占的芯片面积节省47.88%.而该fuse-box结构相对传统centralized fuse-box结构,其修复信息的解压缩修复时间减少为centralized fuse-box结构解压缩修复时间的26.91%.研究得出的结论已经在实际产品中获得验证,可广泛应用于SOC设计.In order to overcome the failed embedded memory`s influence on the SOC chip,the built in soft repair(BISR)technology which is completed to repair the memory by using the redundant element has been applied.For the disadvantage of BISR,the paper introduces the BIHR technology whose repair signature information is stored in the e-fuse box.By comparing the advantages and disadvantages of separated fuse-box and centralized fuse-box,the paper presents a new structure of centralized fuse-box with reg_bank module.The structure can save 47.88% of the chip area which the separated fuse-box will occupy.And the structure can reduce the decompress time to 26.91%,which the traditional centralized fuse-box will take.The schematic structure has been applied successfully in the product,and it can be widely applied in the soc design.

关 键 词：内自建测试 内自建软修复 内自建硬修复 e-fuse BOX 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]