C_(60)外延薄膜的生长  

STUDY OF EPITAXIAL GROWTH OF C_(60)

作　　者：赵文兵[1] 张晓东[1] 叶志远[1] 张金龙[1] 李传义[1] 尹道乐[1] 顾镇南[2] 周锡煌[2] 金朝霞[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京大学化学系,北京100871

出　　处：《低温物理学报》1993年第5期325-330,共6页Low Temperature Physical Letters

基　　金：国家超导中心及研究生基金

摘　　要：我们研究了各种淀积参数(衬底温度,沉积速率和薄膜厚度)对C(?)薄膜在云母及NaCl衬底上成膜的影响,并在云母(001)新鲜解理面上成功地制备出了高质量的C(?)外延薄膜,此外,我们还对C(?)薄膜可能的生长过程,薄膜与衬底的取向关系及其缺陷结构进行了一定的讨论。We carefully studied the growth of C60 thin films on (001) mica and NaCl substrates under a series evaporation conditions including different substrate temperature, deposition rate and film thickness. High quality, single crystal thin films of C6o have been obtained on freshly cleaved (001) plane of mica, which is fundamental to the further investigation of physical and chemical properties of this kind of material, especially to the study of superconductivity.

关 键 词：范德华晶体 碳60 外延层 薄膜 

分 类 号：O511[理学—低温物理]