偏压热刺激表面电位衰减——测量陷阱参数的新方法  

Biased Thermally Stimulated Surface Potential Decay—A New Method to Measure the Dielectric Trap Parameters

作　　者：王玉芬[1] 刘付德[2] 刘耀南[1] 

机构地区：[1]西安交通大学 [2]华南理工大学

出　　处：《电子测量与仪器学报》1993年第2期32-36,共5页Journal of Electronic Measurement and Instrumentation

摘　　要：针对现有的绝大部分陷阱能态分布测试方法都不能区分电子陷阱和空穴陷阱的贡献,而等温表面电位衰减虽能区分双载流子的贡献却耗时太长的缺点,本文提出一种能克服上述缺点的新方法——偏压热刺激表面电位衰减测试技术。这一方法所考虑的模型比较接近实际情况,并能快速而方便地分别测得电子陷阱和空穴陷阱的能级密度。Most of present techniques for measuring the energy state disotribution of traps can not separate the electron traps from hole traps and the isothermal surface potential decay can do so, but it is time-consuming. A new technique named biased thermally stimulated surface potential decay is proposed in this paper which can overcome the above weakness. The model of this method is very close to the real condition. It is convenient and quick to obtain the trap densities of electron and hole separately by this new technique.

关 键 词：陷阱 热刺激 表面电位衰减 测量 

分 类 号：TM215.06[一般工业技术—材料科学与工程]