PECVD法低温形成纳米级薄介质膜击穿特性的实验研究  

Experimental study of breakdown characteristic of thin dielectric film in nanometre range formed by low temperature PECVD

作　　者：陈蒲生 刘剑[2] 张昊[3] 冯文修 

机构地区：[1]华南大学应用物理系,广东广州510640 [2]广东省邮电科学研究院,广东广州510665 [3]中国电子科技集团公司第五研究所,广东广州510610

出　　处：《半导体技术》2004年第6期71-75,共5页Semiconductor Technology

基　　金：广东省自然科学基金项目(950186)

摘　　要：对等离子体增强化学汽相淀积(PECVD)法制成纳米级SiOxNy薄膜组成的MIS结构样品,通过美国HP系列设备测试I-V特性、准静态及高频C-V特性。分析了薄膜I-V特性、击穿机理与各项电学性能;探讨了膜的击穿电场等电学参数以及击穿电场随反应室气压、混合气体比例、衬底温度的变化关系;给出了击穿等电性优良的PECVD形成SiOxNy薄介质膜的优化工艺条件。For the MIS structure sample composed of SiOxNy thin film in nanometre range fabricatedby PECVD, the I-V characteristic, quasistatic and high frequency C-V characteristic were measured bya series of American HP electrical installations. The I-V characteristic, breakdown mechanism andvarious electrical properties of the thin film were analyzed. The film breakdown field, other electricalparameter and the relationships of the breakdown field with the chamber pressure, the mixture gasproportion and the substrate temperature were explored. The process condition of the PECVD SiOxNythin dielectric film is optimized. The thin film formed by the optimized condition possess good break-down and other electrical characteristics.

关 键 词：PECVD 等离子体增强化学汽相淀积 薄介质膜 击穿机理 电学性能 

分 类 号：TN304.05[电子电信—物理电子学]