W18Cr4V高速钢基体的TiN化学气相沉积  

Chemical Vapour Deposition of TiN on W18Cr4V High-Speed-Steel Substrate

作　　者：王豫[1] 陈伟[1] 

机构地区：[1]安徽工业大学材料学院,安徽马鞍山243002

出　　处：《金属热处理》2004年第5期8-11,共4页Heat Treatment of Metals

基　　金：安徽省教育厅自然科学基金 ( 2 0 0 2kj0 42 )

摘　　要：研究了气体总流量、沉积温度、TiCl4 蒸发温度、氮氢比等工艺参数对W 18Cr4V高速钢基体TiN沉积速率的影响。确定了沉积过程分别为扩散控制区和表面过程控制区的试验条件。在表面过程控制区域 ,测定了本试验条件下W 18Cr4V钢基体TiN化学气相沉积的表面过程表观活化能值为 137 2 3kJ/mol。The effects of processing parameters,suchas total gas flow rate,deposition temperature,TiCl_4 evaporation temperature and N_2/H_2 ratio, on the TiN deposition rate on W18Cr4V high speed steel substrate were studied.The conditions under which the deposition process is controlled by diffusion limited growth and surface limited growth process were determined respectively.In the region of surface process control,the apparent activation energy of TiN chemical vapour deposition on W18Cr4V steel substrates was measured and calculated,and its value is 137.23kJ/mol.

关 键 词：化学气相沉积 氮化钛 沉积速率 

分 类 号：TG174.444[金属学及工艺—金属表面处理]