添加剂对MgTiO_3系统陶瓷介电性能的影响  

Effects of Additions on the Dielectric Properties of MgTiO_3 System Ceramics

作　　者：苏皓[1] 吴顺华[1] 颜海洋[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《硅酸盐通报》2004年第3期31-34,共4页Bulletin of the Chinese Ceramic Society

摘　　要：用电子陶瓷工艺制备主晶相为MgTiO3,附加晶相为CaTiO3的介电陶瓷。MgTiO3是具有钛铁矿结构的晶体,属于六方晶系。调节MgTiO3与CaTiO3的比例可以把该系统的温度系数调节到零附近,并适当提高εro研究硼掺杂对MgTiO3系统陶瓷的介电性能的影响:硼掺杂降低了陶瓷的烧结温度,同时加快了陶瓷的致密化过程,而且对Q值(Q=1/tanδ)没有明显的负面影响。硼在烧结中以液相存在,因而促进了烧结中反应的进行,起到了助熔剂的作用。The dielectric ceramics with a main crystal phase of MgTiO3 and additional crystal phase of CaTiO3 was prepared by conventional electronic ceramics technology. The structures of MgTiO3 are ilmenite - type, and belong to hexagonal syngony. The ratio of MgTiO3 to CaTiO3 can be adjusted to gain zero temperature coefficient of εr and higher εr of the system. The effects of boron doping on the dielectric properties of MgTiO3 ceramics were investigated. Boron doping decreases the sintering temperature and causes rapid densification with no obvious negative effect on Q values of the system (Q = 1/tanδ) . Boron exists as liquid phase in the sintering procedure, which promotes the reactions in the process of sintering .

关 键 词：添加剂 MGTIO3 介电性能 介电陶瓷 CATIO3 硼掺杂 温度系数 烧结温度 致密化 助熔剂 

分 类 号：TQ174.756[化学工程—陶瓷工业]