辐射感生场氧漏电流对CMOS运算放大器特性的影响  

The Influences of the Leaked Current from the Field Oxide Induced by the Total Dose Radiation on the Performances of CMOS Amplifiers

作　　者：陆妩[1] 余学锋[1] 任迪远[1] 郭旗[1] 郑毓峰[2] 张军[2] 

机构地区：[1]中科院新疆物理研究所,乌鲁木齐830011 [2]新疆大学,乌鲁木齐830046

出　　处：《固体电子学研究与进展》2004年第2期182-185,共4页Research & Progress of SSE

摘　　要：介绍了不同版图结构制作的 CMOS运放电路的电离辐照实验结果 ,分析比较了在常规版图及采用了保护环措施后制作的运放电路辐照响应之间的差异。结果显示 ,常规版图制作的运放电路 ,由于存在不易消除的场氧漏电 ,其电路的辐射敏感性会明显增大。而加入保护环后 ,能明显消除这一不利影响 ,从而使电路的抗辐照特性得到改善。The total dose radiation responses of the CMOS amplifiers with varied structure patterns were presented. By compared the radiation effects of the amplifiers having normal structure pattern with that having protecting circles, it was concluded that the former have more radiation sensitivity because of the existence of the leaked current from the field oxide whereas the radiation responses in later case are reduced by applying a protecting circles in the around of their gates. Our results will be great helpful to improve the radiation hardening of the CMOS amplifiers.

关 键 词：CMOS运算放大器 场氧漏电 氧化物电荷 界面态 

分 类 号：TN72[电子电信—电路与系统]