硅—硅键合界面的TEM观察  

TEM Observation for the Direct Bonding Interface of Silicon Wafer

作　　者：詹娟 刘先廷 

出　　处：《电子器件》1993年第4期203-205,共3页Chinese Journal of Electron Devices

摘　　要：本文主要利用电子透射显微镜观察硅片直接键合界面,在界面处存在一无定型过渡区,证实了依靠硅片表面吸附的羟基作用完成键合时,在界面会留下极薄的硅氧化物无定形区.Silicon Wafer direct bonding interface is observed by transmission electron microscope (TEM). Thare is non-crystal transition region on interface, It is concluded that very thin silicon oxide non-crystel region remains on the interface whell bonding is completed by silicon surface adsorbing hydroxyl.

关 键 词：硅片直接键合 硅 界面 电子透射显微镜 观察 

分 类 号：TN304.12[电子电信—物理电子学]