大光腔小垂直发散角InGaAs/GaAs/AlGaAs半导体激光器  

Large optical cavity and small vertical divergence angle semiconductor lasers

作　　者：崔碧峰[1] 李建军[1] 邹德恕[1] 廉鹏[1] 韩金茹[1] 王东凤[1] 杜金玉[1] 刘莹[1] 赵慧敏[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《物理学报》2004年第7期2150-2153,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目(批准号:G2000068302);北京市自然科学基金(批准号:4032007);国家高技术研究发展计划(批准号:2002AA312070)资助的课题~~

摘　　要：提出并实现了新型隧道再生耦合大光腔半导体激光器 ,近场光斑宽度达到 1μm ,较普通半导体激光器提高了一个数量级 ,有效地解决了普通半导体激光器由于发光面积狭窄而导致的端面灾变性毁坏和垂直发散角大的问题 .采用低压金属有机物化学气相沉积方法生长了以C和Si分别作为掺杂剂的AlGaAs隧道结、GaAs InGaAs应变量子阱有源区和新型半导体激光器外延结构 ,并制备出器件 ,其垂直发散角为 2 0°,阈值电流密度为 2 77A cm2 ,斜率效率在未镀膜时达到 0 80W A .A novel coupled large optical cavity cascaded by tunnel-junction semiconductor lasers is put forward to resolve the major difficulties of ordinary laser diodes. In this structure several active regions are cascaded by tunnel junctions to couple a large optical cavity. This structure can solve the problem of catastrophic optical damage of facet and large vertical divergence caused by thin emitting area in ordinary laser diodes. The near-field facalur size reaches 1μm. Low-pressure metal-organic chemical vapor deposition is adopted to grow the novel semiconductor lasers. Slope efficiency as high as 0.80W/A per facet and vertical divergence angle of 20° and threshold current density of 277 A/cm 2 are achieved from an uncoated novel laser device.

关 键 词：半导体激光器 大光腔 隧道再生 发散角 砷镓铟 砷化镓 砷镓铝 

分 类 号：TN248[电子电信—物理电子学]