反应离子束刻蚀应用于光刻胶灰化技术研究  

Reactive Ion Beam Etching Applied to Photoresist Ashing

作　　者：王旭迪 刘颖[1] 洪义麟[1] 徐向东[1] 付绍军[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室

出　　处：《微细加工技术》2004年第2期23-26,共4页Microfabrication Technology

基　　金：国家863-804主题专项资助项目(863-804-9-2)

摘　　要：以AZ1500光刻胶为例,将氧气作为工作气体的反应离子束刻蚀工艺用于光刻胶图形的灰化处理,以去除经紫外曝光-显影后光栅中的残余光刻胶。研究结果表明灰化速率有随束流密度呈线性增加的趋势。经过反应离子束刻蚀后,光栅槽底残余光刻胶被去除干净,同时线条的宽度变细,在一定程度上达到修正光刻胶光栅线条占空比的目的。用原子力显微镜检测,无光刻胶的K9基片表面在灰化工艺前后其粗糙度无明显变化。该工艺具有良好的可控性,解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。Reactive ion beam etching in oxygen plasma was applied to AZ1500 photoresist ashing so as to remove the remained photoresist after exposure and development.The results show that the ashing rate increases linearly with the ion beam density.The ashing process not only removed the remained photoresist in the goove,but also corrected the duty cycle of the grating obviously.The surface morphology of the K9 glass substrate was examined by the atomic force microscopy and showed little difference in RMS roughness before and after ashing.The process was controllable and could be applied to strip the photoresist residual of diffractive optical element fabricated on the thick substrate.

关 键 词：反应离子束刻蚀 光刻胶灰化 灰化速率 占空比 衍射光学元件 

分 类 号：TN305.7[电子电信—物理电子学]