Si基ZnO/Ga_2O_3氨化反应制备GaN薄膜  

Fabrication of GaN Films by Ammoniating ZnO/Ga_2O_3 Film on Silicon Substrate

作　　者：庄惠照[1] 高海永[1] 薛成山[1] 王书运[1] 董志华[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《微细加工技术》2004年第2期37-41,共5页Microfabrication Technology

基　　金：国家自然科学基金资助项目(90301002;90201025)

摘　　要：利用射频磁控溅射法在Si(111)衬底上先溅射ZnO缓冲层,接着溅射Ga_2O_3薄膜,然后ZnO/Ga_2O_3膜在开管炉中850℃常压下通氨气进行氨化,反应自组装生成GaN薄膜。XRD测量结果表明利用该方法制备的GaN薄膜是沿c轴方向择优生长的六角纤锌矿多晶结构的薄膜,利用傅里叶红外吸收光谱仪测量了薄膜的红外吸收谱,利用SEM和TEM观测了薄膜形貌,PL测量结果发现了位于350nm和421nm处的室温光致发光峰。In this study,ZnO buffer layer was sputtered on Si(111) substrate using radio frequency magnetron sputtering system and then Ga_2O_3 film was sputtered on it.ZnO/Ga_2O_3 film was ammoniated at 850?℃ in tube furnace under flowing NH_3 ambience to react and self-organize to form GaN film.The measurement result of X-ray diffraction(XRD) revealed that the prepared GaN film was grown in c axis orientation with hexagonal wurtzite structure.Fourier transform infrared spectrophotometer (FTIR) was used to measure the FTIR spectrum of the sample.The morphology of the GaN film were studied by scanning electron microscopy(SEM) and transmission electronic microscope(TEM).And the measurement result of room-temperature photoluminescence spectra has the PL peaks located at 350?nm and 421?nm.

关 键 词：Ga2O3薄膜 ZnO缓冲层 氨化 自组装 射频磁控溅射 

分 类 号：TN304.23[电子电信—物理电子学]