多孔硅的微结构对其Raman谱的影响  

Effects of Micro-structure of Porous Silicon on Its Raman Spectra

作　　者：刘小兵[1] 史向华[1] 柳毅[2] 柳玥[2] 王行军[2] 丁训民[2] 侯晓远[2] 

机构地区：[1]长沙电力学院物理与信息工程系,湖南长沙410077 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《半导体光电》2004年第3期194-196,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(19525410)

摘　　要：　用场发射扫描电子显微镜研究了用直流化学腐蚀和脉冲电化学腐蚀方法制备的多孔硅(PS)的微结构,观察并测试了孔洞的垂直度、深度以及洞宽(直径),对PS的纵向微结构进行了二次电子图像和背散电子图像的分析。使用高灵敏的共焦显微Raman系统研究了纵向的Raman谱,同时分析了微结构对纵向Raman效应的影响。The micro-structures of porous silicon(PS) prepared by DC electro-etched and pulse electro-etched are studied with the help of a field emission scanning electron microscope. The verticality, depth and width(diameter)of the pores are observed and measured. The vertical micro-structures of the PS are analyzed by studying the double electron pictures and the back scattered electron imagery . The vertical Raman spectra are studied by means of the high sensitive co-focused micro-Raman system . The effects of the micro-structure on the vertical Raman spectra are analyzed in the meantime.

关 键 词：多孔硅 场发射扫描电镜 RAMAN谱 微结构 

分 类 号：O657.37[理学—分析化学]