GaP纯绿发光二极管的近红外发光研究  

NEAR-INFRARED ELECTROLUMINESCENCE STUDIES OF GaP PURE GREEN LIGHT-EMITTING DIODES

作　　者：赵家龙[1] 高瑛[1] 刘学彦[1] 苏锡安 丁祖昌[2] 毋必先 张松斌[2] 

机构地区：[1]中国科学院长春物理研究所,长春130021 [2]浙江大学物理系,杭州310027

出　　处：《发光学报》1993年第4期349-354,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金;中国科学院长春物理研究所激发态物理开放研究实验室基金

摘　　要：本文测量了GaP纯绿发光二极管在室温和液氮温度下的近红外发光光谱,观测到许多重叠的宽带发光.按高斯线型对光谱进行拟合,将其分解为6个发光谱峰,讨论了这些深能级发光的来源和它们对GaP发光二极管的发光强度的影响.The near-infrared electroluminescence spectra of GaP pure green (PG) light-emitting diodes (LEDs) were studied at room temperature (300K) and liquid nitrogen temperature (77K). Many overlapping broad emission bands were observed in the luminescence spectra. The spectra were fitted with Gaussian lineshapes and can be decomposed into six Gaussian peaks. Finally the origins of the deep level luminescence bands in the GaP PG LEDs and the influence of deep levels on the luminescence intensities of the LEDs were discussed.

关 键 词：近红外发光 发光二极管 磷化镓 

分 类 号：TN383.1[电子电信—物理电子学]