SiGeC三元合金的研究进展  

Research and development of SiGeC ternary alloy

作　　者：赵雷[1] 左玉华[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点联合实验室,北京100083

出　　处：《微纳电子技术》2004年第7期1-9,14,共10页Micronanoelectronic Technology

基　　金：国家自然科学重点基金项目(60336010);973项(TG2000036603);863计划项目(2002AA312010)

摘　　要：SiGeC三元合金是一种新型的Ⅳ-Ⅳ族半导体材料,其中的碳可以为SiGe合金提供应变补偿,调节能带结构,提高热稳定性,从而有利于高性能光电器件的制备。本文总结了近年来关于SiGeC的性能、制备和应用方面的若干研究结果,并对SiGeC进一步的研究方向提出了自己的建议。SiGeC ternary alloy is a new IV-IV semiconductor material. The addition of carbon can provide SiGe alloy many advantages:strain compensation,band adjusting and thermal stabi-lity. So SiGeC ternary alloy has excited a lot of interests of many researchers. Here,some impressive results,which were recently obtained about the characteristics,the preparation and the application of SiGeC are summarized. And several aspects,which should be further explored possibly,are pointed out.

关 键 词：SIGEC 应变补偿 能带偏移 制备 应用 

分 类 号：TN304.26[电子电信—物理电子学]