退火处理对CdIn_2O_4薄膜光电特性的影响及温差电动势的研究  

Annealing effect on photoelectric property of CdIn_2O_4 thin film and its thermoelectromotive force

作　　者：杨丰帆[1] 王万录[1] 廖克俊[1] 付光宗[1] 张瑞俭[1] 曹春兰[1] 

机构地区：[1]重庆大学应用物理系,重庆400044

出　　处：《真空》2004年第3期35-37,共3页Vacuum

摘　　要：研究了直流磁控反应溅射制备三元化合物CdIn2O4薄膜(简称CIO膜)的光电性质和温差电动势,及其反应气体中氧浓度和退火处理对CIO膜性质的影响。结果表明CIO膜在可见光区有良好的导电性和透光性,退火处理明显提高了膜的透光率和载流子浓度,这一影响对CIO的广泛应用具有重要的意义。The photoelectric property and thermoelectromotive force of CdIn_2O_4 or CIO thin film deposited by way of DC reactive magnetron sputtering process were investigated, as well as the effects of the O_2 concentration in reacting gas and annealing process on the property of CIO films. The results showed that CIO thin films have favorable conductivity and transmittance within visible spectrum, and the annealing process can improve obviously the transmittance and carrier concentration of the thin films. This is of significance to CIO films' comprehensive applications.

关 键 词：CIO膜 光电特性 退火处理 温差电动势 

分 类 号：TN305.8[电子电信—物理电子学] TG156.2[金属学及工艺—热处理]