一种新型n^-区多层渐变掺杂SiGe/Si功率开关二极管  

A Novel SiGe/Si Power Diode with Multilayer Gradual Changing Doping in the n^-Region

作　　者：马丽[1] 高勇[2] 王彩琳[2] 

机构地区：[1]西安理工大学应用物理系,西安7100482 [2]西安理工大学电子工程系,西安710048

出　　处：《电子器件》2004年第2期232-235,共4页Chinese Journal of Electron Devices

基　　金：信息产业部 2 0 0 1年信息产业科研试制项目 (0 1XK6 10 0 12 )

摘　　要：n- 区掺杂浓度采用多层渐变式结构的p+ (SiGe) n- n+ 异质结功率二极管 ,对该新结构的反向恢复特性及正反向I -V特性进行了模拟 ,从器件运行机理上对模拟结果做出了详细的分析。与n- 区固定掺杂的普通p+ (SiGe) n- n+ 二极管相比 ,在正向压降基本不发生变化的前提下 ,渐变掺杂后的器件反向恢复时间可缩短一半 ,反向峰值电流能降低 33% ,反向恢复软度因子可提高 1 5倍。并且 ,随着n- 区渐变掺杂的层数增多 ,反向恢复特性越好。A novel SiGe/Si hetero-junction power diode with multilayer gradual changing doping concentration in the n^-region is proposed. Compared with conventional structure of p^+(SiGe)-n^--n^+diode with the constant doping concentration in the n^-region, the reverse recover time of the device with multilayer gradual changing doping can be shorted nearly a half, the peak reverse recovery current can be reduced about 33% and the softness factor S can be increased about 1.5 times, while the forward drop is almost not changed. Furthermore, a further improvement in the reverse recovery characteristics can be achieved by the use of the n^-region consisting of more doping layers.

关 键 词：SIGE/SI异质结 功率二极管 多层渐变掺杂 快速软恢复 

分 类 号：TN313.4[电子电信—物理电子学]