基于SOS/SOI绝缘衬底的Si/SiGe HBT设计  

Design of Si/SiGe HBT's Based on SOS/SOI Substrates

作　　者：史辰[1] 陈建新[1] 杨维明[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2004年第4期421-424,共4页Microelectronics

基　　金：北京市自然科学基金资助(4032005)

摘　　要：　着重讨论了衬底阻抗对HBT器件频率性能的劣化机制。基于双口网络理论,定量分析了fT和fm与衬底电阻率的关系;采用SOS/SOI绝缘衬底和自行设计的岛型隔离方法,抑制了绝大多数容性寄生参数;同时,围绕绝缘衬底进行Si/SiGeHBT的横向/纵向结构设计,开发出发射极自对准工艺方法,用于降低接触电阻和一定特征尺寸下的结面积,提高了HBT的频率性能。Deterioration mechanism of HBT's frequency characteristics due to substrate resistivity is discussed, and the relation between f_T, f_m and substrate resistivity is analyzed based on 2-port network theory.By employing SOS/SOI substrates and a self-designed island isolation method, most of the capacitive parasitic parameters are effectively reduced.Si/SiGe HBT's horizontal and vertical structures are designed based on SOS/SOI substrates, and an emitter-self-aligned technique is developed to reduce contact resistance and junction area at given feature size, which greatly improves HBT's frequency characteristics.

关 键 词：SOS/SOI 异质结双极晶体管 衬底阻抗 岛膈离 发射极自对准 HBT 

分 类 号：TN322.8[电子电信—物理电子学]