CdSe量子点的制备与荧光特性研究  

Fabrication and photoluminescence investigation ofCdSe quantum dots

作　　者：茅惠兵[1] 陈静[2] 李志峰[2] 戴宁[2] 朱自强[1] 

机构地区：[1]华东师范大学电子系,上海200062 [2]中国科学院上海技术物理研究所红外物理国家实验室,上海200083

出　　处：《量子电子学报》2004年第4期528-531,共4页Chinese Journal of Quantum Electronics

基　　金：上海市重大基础研究项目(03DJ14002);中科院红外物理国家实验室开放课题(200401)资助

摘　　要：主要讨论了CdSe量子点的制备及荧光特性。CdSe量子点由化学方法制备,通过选择不同的反应时间得到不同尺度的量子点样品。用荧光方法研究了量子点样品在石英衬底和有机溶剂中的荧光特性。实验表明,这些量子点都有良好的荧光特性。还用无限深球方势阱模型分析了量子点样品的电子态,并根据荧光参数估算了量子点的尺度。各样品荧光峰具有一致的半峰宽,表明CdSe量子点的成核过程在反应开始时同时完成。The fabrication and photoluminescence investigation of CdSe quantum dots were presented. The CdSe quantum dots were fabricated by chemical method, and the quantum dots with different radii were obtained by the choice of the reaction time. The photoluminescence method was used to investigate the luminescence properties of the quantum dots both on quartz substrate and in liquor. The researches show that all the samples have good luminescence properties. The electronic states were investigated using a model of spherical square well with infinite depth, and the radii of the quantum dots were estimated from the parameters of the luminescence data. The photoluminescence FWHM (full-width at half maximum) of the quantum dots with different radii shows that the nucleation process takes place at the beginning of the reaction.

关 键 词：半导体光电 量子点 CDSE 荧光 

分 类 号：O472.3[理学—半导体物理]