退火温度对碳注入外延硅蓝光发射特性的影响  

Effect of Annealing Temperature to Blue Emission of Epitaxial Silicon with C^+ Implantation

作　　者：李忠[1] 赵显[2] 李玉国[1] 薛成山[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014 [2]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《电子元件与材料》2004年第7期46-47,50,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(60071006)

摘　　要：获得了不同退火温度注碳外延硅的蓝光发射谱,分析了退火温度对其蓝光发射特性的影响,发现退火温度为 1 000℃样品具有最强的发射强度。认为经碳注入所引入的杂质C = O 复合体是发光的重要因素;经碳注入氮气氛中退火及电化学腐蚀处理形成纳米硅镶嵌结构,因量子限制效应–表面复合效应而发光。Epitaxial silicon with C^+ implantation is used to acquire blue emission, and the blue properties of which are discussed therein to find that 1000℃ is the optimal annealing temperature. As to the resource of blue luminescence, we hold that the C = O compound introduced into silicon substrate with C^+ implantation is vital to blue emission. Nanometer Si with embedded structure formed by C^+ implantation-N2 annealing-anodization can emit blue light due to quantum confinement effect-surface recombination effect.

关 键 词：注碳外延硅 蓝光发射 纳米硅镶嵌结构 氮气氛中退火 

分 类 号：TN304.24[电子电信—物理电子学]