高技术功能薄膜材料电阻率测试新法及微机测试系统  

A New Four-Probe Method for Resistivity Measurement of Functional Thin Film Materials and Microcomputer Test System

作　　者：唐森[1] 李荣志[1] 朱鹤孙[1] 

机构地区：[1]北京理工大学材料科学研究中心,北京100081

出　　处：《功能材料》1993年第3期256-260,共5页Journal of Functional Materials

摘　　要：介绍一种适于测量几何形状无规则的薄形样品电阻率的改进直流四探针法(IFPM),同时提出了带背底样品的测试实验修正原理和方法。采用具有标准IEEE—488接口和24路I/0控制接口的PC/XT微机和智能数字仪表组成测试实施系统,在Solartron35 system上用范德堡法(VDPM)和在本系统上用IFPM法对同一块硅单晶片进行了对比测试,二者偏差为4.3％。采用该法还测试研究了直流电弧等离子体喷射技术在陶瓷基底上制备的1μm厚铜-聚丙炔腈(Cu-PPN)金属有机导电薄膜的电阻率与温度的关系,结果表明Cu-PPN薄膜具有非晶半导体的扩展传导机制。研究表明,IFPM法对目前不能沿用传统技术的高技术薄膜材料电阻率测试是一条有效的途径。The paper deals with a new method of four-probe measurement for the resistivity of thin film with free shape, and experimental principle of correction on the sample with substrate is suggested simultaneously. A practice system consists of the PC/XT microcomputer and the digital meter with IEEE-488 standard interface. A comparative test to the same silicon wafer was conducted. The deviation of results obtained by the system to that of traditional van der Pauw method (Solartron 35 system) was loss than 4.3%. The dependence between temperature and conductivity of the organometallic thin films Cu-polypropynonitrile(Cu-PPN) that were prepared by dc arc plasma jet in our laboratory was studied with the new apparatus, the results can be explained fairly on the theory of amorphous semiconductor.

关 键 词：功能薄膜材料 电阻率 探针法 微机 

分 类 号：TM215.3[一般工业技术—材料科学与工程]