嵌入式存储器的内建自测试和内建自修复  

Survey on Built-in Self-test and Built-in Self-repair of Embedded Memories

作　　者：江建慧[1] 朱为国[1] 

机构地区：[1]同济大学计算机科学与技术系,上海200092

出　　处：《同济大学学报（自然科学版）》2004年第8期1050-1056,共7页Journal of Tongji University:Natural Science

基　　金：国家自然科学基金资助项目 (90 2 0 70 2 1) ;同济大学理科科技发展基金资助项目

摘　　要：指出内建自测试是嵌入式存储器测试的一种有效方法 ,对该领域的研究情况进行了评述 .总结了存储器传统的故障模型 ,重点讨论了诱导故障分析方法以及读干扰故障、错误读等新的故障模型 .详细分析了嵌入式存储器的典型内建自测试方案 ,讨论了在内建自测试电路中增加内建冗余分析、内建故障诊断和内建自修复等功能的可行性 .Built-in self-test (BIST) is considered as an efficient approach for embedded memories testing.This paper gives a survey on the up-to-date development of research in this field.It begins with an overview of conventional fault models for memories so far.The inductive fault analysis approach and some new fault models such as read disturb fault and incorrect read fault are discussed.The typical BIST schemes for embedded memories are analyzed.The feasibility of adding built-in redundancy analysis,built-in self-diagnosis and built-in self-repair into BIST circuits is analyzed.

关 键 词：嵌入式存储器 故障模型 内建自测试 内建自修复 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构] TP306[自动化与计算机技术—计算机科学与技术]