竹叶状GaN纳米带的制备  

Fabrication of GaN Nanoribbons with Bamboo Leaf-shaped Morphology

作　　者：高海永[1] 庄惠照[1] 薛成山[1] 王书运[1] 董志华[1] 何建廷[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《电子元件与材料》2004年第9期1-2,5,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.90301002;90201025)

摘　　要：为了制备GAN纳米带,用射频磁控溅射法在Si(111)衬底上先溅射ZnO中间层,接着溅射Ga2O3,然后ZnO/Ga2O3膜在开管炉中1000℃下常压通氨气进行氨化。在氨气气氛中ZnO在高温下挥发,借助于ZnO挥发的帮助,Ga2O3与NH3反应自组装生成GaN纳米带。XRD分析结果表明GaN纳米带为六方纤锌矿结构,利用SEM观测GaN纳米带具有竹叶状形貌,PL谱测量发现了位于370nm处和460nm处的室温光致发光峰。For fabrication of GaN nanoribbons, ZnO middle layers were sputtered on Si(111) substrates using radio frequency magnetron sputtering system and then Ga2O3 were sputtered on them. ZnO/Ga2O3 films were ammoniated at 1 000 ℃ in tube furnace under flowing NH3 ambience. ZnO volatilized in ammonia ambience in high temperature, and Ga2O3react to NH3 for reactively self-organization to fabricate GaN nanoribbons with the assistance of the volatilization of ZnO.The meaurement result of XRD revealed that the GaN nanoribbons have hexagonal wurtzite structure. The synthesized GaN nanoribbons took on bamboo leaf-shaped morphology through the observation using SEM. And the mearement result of room-temperature photoluminescence spectra found the PL peaks locate at 370 nm and 460 nm.

关 键 词：半导体材料 GAN纳米带 氨化 挥发 ZnO/Ga2O3膜 

分 类 号：TN304.23[电子电信—物理电子学]