Zn-Sn-O透明导电膜的制备和光电性质  

Preparation and Properties of Conducting Transparent ZnO-SnO_2 Films Deposited at Room Temperature

作　　者：马瑾[1] 黄树来[1] 计峰[1] 余旭浒[1] 王玉恒[1] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《稀有金属》2004年第3期519-521,共3页Chinese Journal of Rare Metals

基　　金：国家自然科学基金资助项目 ( 60 2 70 44 ) ;教育部科学技术研究重点项目 ( 0 2 165 )

摘　　要：采用射频磁控溅射法在 70 5 9玻璃衬底上低温制备出Zn Sn O透明导电薄膜。制备薄膜为非晶结构 ,并且具有很好的稳定性 ,与玻璃衬底具有良好的附着性。薄膜主要是依靠膜中的氧空位导电 ,薄膜的电阻率强烈地依赖溅射气体中的氧分压。制备薄膜的最低电阻率为 2 2 7×10 - 3Ω·cm ,在可见光范围内的平均透过率达超过 90 %。Transparent conducting Zn-Sn-O films were prepared on corning 7059 glass substrates at room temperature by r.f. magnetron sputtering. The deposited films are amorphous. The prepared films on 7059 glass substrates are physically stable and have very good adhesion to the substrates. The resistivities of the films depend greatly on the oxygen pressure. The resistivity of the deposited films is 7.27×10^(-3) Ω·cm, and the optical transmittance of the films is above 90%.

关 键 词：透明导电膜 Zn-Sn-O 射频磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055