制备Ga As激光窗口材料的一种新型补偿掺杂剂  

A New Compensating Dopant to Develop GaAs Laser Window Material

作　　者：黎建明[1] 屠海令[1] 

机构地区：[1]北京有色金属研究总院红外光学材料所,北京100088

出　　处：《稀有金属》2004年第3期554-557,共4页Chinese Journal of Rare Metals

摘　　要：用氧化铬 (Cr2 O3)作补偿掺杂剂、LEC法生长的GaAs窗口晶体 ,容易满足高阻补偿条件 ,碳、硅两种主要的残余杂质得到有效抑制 ,获得低自由载流子光吸收的优质GaAs红外激光出口材料。补偿掺杂剂氧化铬 (Cr2 O3)剂量为 99 9999%Ga和 99 9999%As量的优选范围是0 0 1%～ 0 0 4% (质量分数 )。室温下的自由载流子浓度低于 5× 10 6 cm- 3,对光吸收系数的贡献可以忽略。轻掺氧化铬高阻GaAs晶体具有良好的红外透射特性 ;10 6μm处激光量热法测量的红外光吸收系数约为 1 4× 10 - 3cm- 1 。By using Cr_2O_3 as a new compensating dopant, carbon and silicon as the two dominating impurities were restrained effectively, and the compensation mechanism equation was also met easily, thus the high-quality LEC GaAs crystals of low free carrier absorption infrared laser window material could be obtained. The excellent amount of Cr_2O_3 compensating dopant is in the range of 0.01%～0.04% of the total weight of 99.9999%Ga and 99.9999%As. Lightly Cr_2O_3 doped LEC GaAs crystals, whose free carrier concentration was less than 5×10~6 cm^(-3), have good characteristic of infrared transmission with the optical absorption coefficient about 1.4×10^(-3) cm^(-3) measured by laser calorimetry at the wavelength of 10.6 μm.

关 键 词：GAAS 激光窗口 补偿掺杂 

分 类 号：TN304.23[电子电信—物理电子学]