GaAs/AlGaAs双量子阱结构的子带光学吸收  

Intersubband Optical Absorption in GaAs/AlGaAs Double Quantum Well Structure

作　　者：伍滨和[1] 曹俊诚[1] 夏冠群[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《稀有金属》2004年第3期577-578,共2页Chinese Journal of Rare Metals

基　　金：国家重点自然科学基金 ( 2 0 0 1CCA0 2 80 0 ) ;重大国家研究项目特别基金 (G2 0 0 0 0 683 );上海市科技发展基金光计划专项( 0 116610 75 )资助项目

摘　　要：利用微观运动方程计算了超快红外泵浦光引起的半导体双量子阱结构的子带间极化。基于自洽场理论 ,可以求出瞬态探测光吸收系数。这一方法没有采用稳态假设。计算了不同泵浦强度和泵浦探测延时的吸收系数。利用这一模型可以计算半导体微结构中的相干载流子的控制问题。The microscopic equations of motion including many-body effects were derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light. Based on the self-consistent field theory, the transient probe absorption coefficient was calculated. These calculations were beyond the previous steady-state assumption, Transient probe absorption spectra were calculated under different pumping intensity and various pump probe delay.

关 键 词：双量子阱 子带跃迁 光学吸收 

分 类 号：O472.3[理学—半导体物理] O481.3[理学—物理]