Ge_2Sb_2Te_5薄膜光学性能和短波长静态记录特性的研究  

Optical Properties and Short-wavelength Optical Recording Properties of Ge_2Sb_2Te_5 Thin Films

作　　者：方铭[1] 李青会[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《光子学报》2004年第8期978-981,共4页Acta Photonica Sinica

基　　金：国家自然科学基金资助项目 (6 0 2 0 70 0 5 )

摘　　要：利用直流磁控溅射制备了单层Ge2 Sb2 Te5薄膜 ,研究了薄膜在 4 0 0～ 80 0nm区域的反射、透过光谱 ,计算了它的吸收系数 ,发现薄膜在 4 0 0～ 80 0nm波长范围内具有较强的吸收 随着薄膜厚度的增加 ,相应的禁带宽度Eg 也随之增加 对Ge2 Sb2 Te5薄膜光存储记录特性的研究发现 ,在5 14 .5nm波长激光辐照样品时 ,薄膜具有良好的写入对比度 ,擦除前后的反射率对比度在 6 %～18%范围内The optical properties of monolayer Ge_2Sb_2Te_5 thin film prepared by dc magnetron sputtering method at the region 400～800 nm were studied. And the optical absorption coefficients were calculated. A comparatively large absorption was observed in the wavelength region of 400～800 nm. The optical energy gap (E_g) increased with increasing the films thickness. The optical storage characteristics of Ge_2Sb_2Te_5 thin film indicated that large reflectivity contrast could be obtained at lower writing power Argon laser (514.5 nm). The erasing reflectivity contrast was in the region 6%～18%.

关 键 词：GE2SB2TE5薄膜 光存储 反射率对比度 光学性能 

分 类 号：O484.41[理学—固体物理]