磁过滤等离子体制备TiN薄膜中沉积条件对薄膜织构的影响  

Effect of deposition parameters on texture of TiN films deposited by filtered cathodc arc plasma

作　　者：张玉娟[1] 吴志国[2] 张伟伟[2] 李鑫[2] 阎鹏勋[2] 刘维民[1] 薛群基[1] 

机构地区：[1]中国科学院兰州化学物理研究所固体润滑国家重点实验室,兰州730000 [2]兰州大学等离子体与金属材料研究所,兰州730000

出　　处：《中国有色金属学报》2004年第8期1264-1268,共5页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目(10074022)

摘　　要：在室温条件下,利用自行设计的平面"S"形磁过滤等离子体设备,在(111)面单晶硅上制备TiN薄膜,通过改变基底偏压和反应气体成分,即通过改变氮气和氩气的气体流量来改变沉积离子的能量和密度,从离子轰击的角度研究了沉积条件对TiN薄膜织构的影响。对薄膜的表面形貌进行观察,用(θ～2θ)和1.5°掠入射2种X射线衍射方法对薄膜晶体结构和晶面取向进行了分析,对薄膜进行了电子衍射研究。结果显示磁过滤等离子制备的TiN薄膜表面平整光滑,颗粒尺寸为20～70nm,且基底偏压和氩气流量的增大促使薄膜发生(111)面的择优取向,且(111)晶面与膜表面平行,而在高氩气流量的情况下,(200)和(220)面在薄膜平面也发生了定向排列。TiN thin films were deposited on (111) silicon substrate at room temperature by using self-made filtered cathodic arc plasma system. The ion energy and density bombarding onto the films surfaces were changed by adjusting the negative substrate bias and N_2 and Ar gas flux. The effect of deposition parameters on the texture of TiN films was studied on the view of ion bombardment. The atomic force microscope and X-ray diffraction were employed to characterize the microstructure and morphology of the TiN thin films. The results show that the TiN thin films deposited by filtered cathodic arc plasma are very smooth, and the particle sizes of the TiN is (2070 nm.) And with increasing negative voltage and Ar flux, the preferred crystalline orientation is on the denser (111) orientation. Comparing the two modes of(θ2θ) and grazing angle incidence(1.5°), it finds that the orientate plane (111) parallels the film surface under high Ar flux, and the (220) and (200) orientate in the plane of film.

关 键 词：氮化钛 磁过滤等离子体 薄膜织构 

分 类 号：TG174.44[金属学及工艺—金属表面处理]