通道电子倍增器内壁涂层的X射线光电子能谱分析  

XPS Analysis of Inner Coating in Channel Electron Multiplier

作　　者：邱丽美[1] 刘芬[1] 赵良仲[1] 

机构地区：[1]中国科学院化学研究所分析测试中心,北京100080

出　　处：《分析测试技术与仪器》2004年第3期159-161,共3页Analysis and Testing Technology and Instruments

摘　　要：用氩离子溅射 XPS纵深分析方法对通道电子倍增器内二次电子发射材料的元素组成和原子价态进行了分析,结果表明该材料中的主要元素为Pb,Bi,Ba,Si和O,其中Pb和Bi都以混合价态存在,它们分别是Pb2+和Pb0;Bi3+和Bi0.The elemental composition and the valence states of atoms in the secondary electron emission (SEE) layer of channel electron multiplier (CEM) were analysed using XPS depth profiling combined with argon ion sputtering. The results show that the surface of SEE layer is mainly composed of Pb, Bi, Ba, Si and O, in which the valence states of Pb are 0 and +2 while those of Bi are 0 and +3.

关 键 词：光电子能谱 倍增器 价态 PB BI 

分 类 号：O657.32[理学—分析化学]