射频功率对氟化非晶碳薄膜微观性能的影响  

Influence of Rf-Power on fluorinated carbon film's micro-capabilities

作　　者：刘雄飞[1] 高金定[1] 肖剑荣[1] 张云芳[1] 周昕[1] 

机构地区：[1]中南大学物理科学与技术学院,湖南长沙410083

出　　处：《绝缘材料》2004年第4期38-40,共3页Insulating Materials

摘　　要：以CH4和CF4的混合气体作源气体,利用等离子体增强型化学气相沉积法(PECVD),改变射频功率,制备了一批氟化非晶碳薄膜样品。用原子力显微镜(AFM)观察了薄膜的表面形貌,发现随着射频功率增大,薄膜均匀性变差,掩蔽效应作用加剧。FITR光谱分析表明:薄膜中主要含有CFx和C＝C键,较低功率下沉积的薄膜中主要含有CF2和CF3,较高功率下沉积的薄膜中主要含CF和CF2。Raman光谱分析发现在较高沉积功率下沉积的薄膜中出现了由sp2和sp3混合微晶结构。Amorphous fluorinated carbon films were deposited by PECVD using CH 4 and CF 4 as source gases at different RF-power.Surface topography of the films was observed by atomic force microscope(AFM).It was found that the films'uniformity got worse and sheltering-effect pricked up as the RF-power increased.Through FTIR spectrum analyses,we discovered that the films mainly contain CFx and C=C bonds,x mainly equals to2,3at lower power while1,2at higher power.It was also discovered that the films contained sp 2 and sp 3 minicrystals at higher RF-powers through Raman spectroscopy analyses.

关 键 词：射频功率 氟化非晶碳薄膜 微观性能 

分 类 号：TM215.3[一般工业技术—材料科学与工程]