High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching  

离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)

作　　者：徐云[1] 曹青[1,2] 孙永伟 叶晓军[1] 侯识华[1] 郭良[1,2] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所 [2]惠州市中科光电有限公司,惠州516023

出　　处：《Journal of Semiconductors》2004年第9期1079-1083,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目 (批准号 :2 0 0 2 AA3 13 0 5 0 )~~

摘　　要：High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.用纯 Ar离子束刻蚀方法制备出大功率高效率 6 5 0 nm实折射率 Al Ga In P压应变量子阱激光器 .对偏角衬底 ,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面 .制备的激光器条宽腔长分别为 4 μm和 6 0 0 μm,前后端面镀膜条件为 10 % / 90 % .室温下阈值电流的典型值为 4 6 m A,输出功率为 4 0 m W时仍可保持基横模 .10 m W,4 0 m W时的斜率效率分别为 1.4 W/ A和 1.1W/ A.

关 键 词：AlGaInP visible lasers Ar  ion beam dry etching 

分 类 号：TN248.4[电子电信—物理电子学]