An Improved Description of Characteristics Length in Substrate Current Model for Submicron and Deep-Submicron LDD MOSFET's  

亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述(英文)

作　　者：于春利[1] 杨林安[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2004年第9期1084-1090,共7页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 2 0 60 0 6)~~

摘　　要：A novel substrate current model is proposed for submicron and deep-submicron li ghtly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channel length and bias int o account.This is due to that the characteristics lenth significantly affects th e maximum lateral electric field and the length of velocity saturation region,bo th of which are very important in modeling the drain current and the substrate c urrent.The comparison between simulations and experiments shows a good predictio n of the model for submicron and deep-submicron LDD MOSFET.Moreover,the analyti cal model is suitable for descgn of devices as it is low in computation consumpt ion.建立了衬底电流模型中特征长度参数的改进描述 ,该参数的引入使衬底电流模型能够有效地适用于从微米尺寸到亚微米、深亚微米尺寸的 L DD MOSFET.在以双曲正切函数描述的 I- V特性基础上 ,该解析模型的运算量远低于基于数值分析的物理模型 ,其中提取参数的运用也大大提高了模型的精度 ,模拟结果与实验数据有很好的一致性 .

关 键 词：LDD MOSFET substra te current characteristics length maximum lateral electric field 

分 类 号：TN386[电子电信—物理电子学]