氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响  

Optical and Structural Properties of Oxygen-doped and Annealed Ge-Sb-Te Thin Films

作　　者：顾四朋[1] 侯立松[1] 刘波[1] 陈静[2] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]中国科学院上海技术物理所红外物理国家实验室,上海200083

出　　处：《中国激光》2003年第12期1111-1115,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金 (5 9832 0 6 0 )重点资助项目

摘　　要：研究了氧掺杂Ge Sb Te磁控溅射相变薄膜在 4 0 0～ 80 0nm区域的光学常数 (n ,k) ,发现不同氧成分薄膜的光学性质有较大差别 ,经过热处理后薄膜的光学性质也发生了较大变化。由热处理前后薄膜的X射线衍射 (XRD)发现 ,经过退火处理后薄膜发生了从非晶态到晶态的相变。Optical properties of oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method in the region of 400-800 nm were studied, including refractive index, extinction coefficient. The results show that optical constants of the Ge-Sb-Te-O films change with oxygen content and heat-treatment. XRD spectra of the films with different oxygen content in the as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. The effect of the strain field induced by oxygen-doping on optical properties is discussed.

关 键 词：薄膜物理学 Ge-Sb-Te薄膜 氧杂质 光学常数 X射线衍射 

分 类 号：O484.41[理学—固体物理]