高迁移率二维电子系统中微波辐射引起的磁阻振荡和零电阻  

Microwave-induced magnetoresistance oscillations and zero-resistance states in high-mobility two-dimensional electron systems

作　　者：雷啸霖[1] 

机构地区：[1]上海交通大学物理系,上海200030

出　　处：《物理》2004年第9期623-628,共6页Physics

基　　金：家自然科学基金 (批准号 :10 3 90 162 ;90 10 3 0 2 7)资助项目

摘　　要：一年以前 ,人们惊奇地发现 :在相当弱的磁场中 ,并不太强的微波辐照就可以使二维半导体的磁阻产生强烈的振荡 ,振幅的最大值可超过无辐照磁阻值的十几倍 ,最小值可以一直降到零 .全世界众多的凝聚态物理学家争相聚焦到这个领域 ,进行了许多实验和理论研究 ,企图弄清这一意外发现的机理 .经过一年多的努力 ,人们已经掌握了这个现象更多的细节 ,对其物理机制也有了初步了解 .但深入的实验和理论探索可能还要继续相当一段时间 .文章将对这个物理现象及相关的理论模型 ,尤其是目前得到较多赞同的光子辅助磁输运模型 ,作一简单的介绍 .A year ago it was surprisingly discovered that, at modest magnetic fields magnetic fields, the magnetoresistance of a two-dimensional semiconductor subjected to microwave radiation of modest strength, can oscillate fiercely with the maximum value more than a factor of ten of the resistance without the radiation and the minimum value all the way down to zero. Many condensed matter physicists have since been exploring the mechanism of this intriguing discovery, and recent experiments have disclosed new details. Although there seems to be a preliminary understanding of the phenomenon, further experimental studies and different theoretical models will be necessary for quite some time before a conclusion can be reached. The present article presents an introduction to the phenomenon and its theoretical models, especially those based on photon-assisted transport which are favored by most people.

关 键 词：二维半导体 磁阻振荡 零电阻态 光子辅助散射 

分 类 号：O472[理学—半导体物理]