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作 者:王菊芳[1] 李文建[1] 周光明[1] 赵静[1] 党秉荣[1] 马秋峰[1] 毛丽敏[1] 冯岩[1]
机构地区:[1]中国科学院近代物理研究所
出 处:《辐射研究与辐射工艺学报》2004年第5期303-306,共4页Journal of Radiation Research and Radiation Processing
基 金:国家自然科学基金(10105012)资助
摘 要:用经过碳离子辐照V79细胞的条件培养基(Irradiatedconditionedmedium,简称ICM)和与受照射细胞共同培养两种方法,研究了未受照射细胞的旁观者效应。结果表明,ICM法可以明显降低未受照射细胞的克隆形成率;受照射细胞与未受照射细胞共同培养一段时间后,细胞克隆形成率比假定没有旁观者效应时的预期值低,细胞微核率和hprt(次黄嘌呤磷酸核糖基转移酶)基因位点突变率与预期值基本相同。推测受照射细胞可能释放出了能对未受照射细胞生长产生毒性的因子,这种因子对未受照射细胞没有明显的致微核和致突变作用。Bystander effects on unirradiated V79 cells were observed by irradiated conditioned medium (ICM) method and co?cultured with carbon?ion?irradiated V79 cells. The results showed that the colony formation efficiency of unirradiated cells is obviously decreased by ICM. After co?culture with carbon?ion?irradiated cells for some time, the colony formation efficiency of co?cultured cells was lower than expected results assuming no bystander effects. The micronucleus frequency and hprt gene mutation rate was almost the same as expected results. Cytotoxic factor(s), which was effective for cell growth but not for micronucleus and mutation on unirradiated cells, might be released by irradiated cells.
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