用于新一代器件的最新STI和金属CMP浆料(英文)  

Newest STI and Metal CMP Slurries for Advanced Generations

作　　者：Toranosuke Ashizawa 

机构地区：[1]Hitachi Chemical Co., Ltd. 4-13-1 Higashi-cho, Hitachi-shi, Ibaraki 317-8555 Japan

出　　处：《电子工业专用设备》2004年第6期13-15,共3页Equipment for Electronic Products Manufacturing

摘　　要：现已开发出了用于浅沟道隔离穴STI雪、铜CMP和低k介质的新型材料。90nm以及下一代技术节点的新型器件要求在软接触CMP条件下减少缺陷率,改善片子表面形貌的衰减。获得的新材料展示了在CMP性能和街写特性方面的改进,因此这些材料被认为能够适应未来技术要求。这些材料的关键之处在于大颗粒尺寸的控制,进行平面化和金属抛光的化学控制以及将控制方法用于旋涂玻璃()材料。Advanced materials for STI, Cu CMP, and low-kdielectric were obtained. Technical nodes of 90 nm or later are requesting for less defectivity, improvement in topography reduction under soft touching CMP condition. The obtained new materials showed improvements in CMP performance and mechanical properties, so that they are considered to be compatible with future technical demands. The key solutions for the issues are large particle size control, new chemical for planarization and metal polishing control, and introducing controlled pores into SOG material.

关 键 词：浅沟道隔离 金属CHP 低κ介质 CHP浆料 平坦化工艺 

分 类 号：TN305.3[电子电信—物理电子学]