InGaAsSb/AlGaAsSb量子阱激光器的子带跃迁设计  

Subband Transition Design of InGaAsSb/AlGaAsSb Quantum Well Lasers

作　　者：唐田[1] 张永刚[1] 郑燕兰[1] 李爱珍[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《半导体光电》2004年第5期376-379,共4页Semiconductor Optoelectronics

基　　金：国家"863"计划资助项目(2002AA313040);国家"97 3"计划资助项目 (G2 0 0 0 0 683 ) ;国家自然科学基金重点资助项目 (60 1 3 60 1 0 )

摘　　要：　采用有效质量框架下一维有限单势阱的Kronig Pency模型对InxGa1-xAsySb1-y/Al0.25Ga0.75As0.02Sb0.98量子阱激光器结构的子带跃迁波长及其和阱宽间的关系进行了设计,并采用能量平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明InGaAsSb/AlGaAsSb是制作23μm中红外波段量子阱激光器的良好材料体系,然而在结构设计和材料生长中采用合适的材料组分及阱宽并对应变总量进行控制是十分重要的。The subband transition of In_xGa_(1-x)As_ySb_(1-y)/Al_(0.25)Ga_(0.75)As_(0.02)Sb_(0.98) quantum well laser structure has been designed by using Kronig-Pency model under effective mass frame. The critical layer thickness of this material system also has been calculated based on energy balance model. Results show that InGaAsSb/AlGaAsSb is a suitable material system for 2~3 μm mid-infrared quantum well lasers. However,the selections of suitable composition and well width as well as the control of total strain in the structure design and growth are very important.

关 键 词：量子阱 激光器 子带跃迁 锑化物 

分 类 号：TN248.4[电子电信—物理电子学]