等离子体增强化学气相沉积端面减反膜的研究  

Facet Antireflection Coatings Deposited by PECVD

作　　者：张立江[1] 熊兵[2] 王健[2] 孙长征[2] 钱可元[1] 罗毅[1,2] 

机构地区：[1]清华大学深圳研究生院 [2]清华大学电子工程系集成光电子学国家重点实验室

出　　处：《半导体光电》2004年第5期380-383,387,共5页Semiconductor Optoelectronics

基　　金：国家"973"计划资助项目(G2000-03-6601);国家"863"计划资助项目 (2 0 0 1AA3 1 2 1 80 )

摘　　要：　利用等离子体增强化学气相沉积(PECVD)技术制作半导体有源器件端面减反膜的方法简单易行,且适合进行大规模在片制作。采用1/4波长匹配法对减反膜的折射率、膜厚及其容差进行了理论设计,并在选定折射率下,对PECVD的沉积速率进行了测量。在此基础上,制作了1.31μmInGaAsP氧化膜条形结构超辐射发光二极管,通过测定输出光谱调制系数的方法确定出减反射膜的反射率为6.8×10-4,并且具有很好的可重复性。A simple method to make antireflection (AR) coatings on semiconductor laser facets using plasma enhanced chemical vapor deposition (PECVD) is proposed.Key parameters of single-layer AR coating,including the refractive index n and the layer thickness h,are designed.The tolerances of n and h to maintain a power reflectivity less than 10^(-3) have been determined to be Δn = ±0.04 and Δh = ±6 nm, respectively.AR coating with reflectivity of 6.8×10^(-4) has been demonstrated using SiN_x film deposited by PECVD.The reflectivity is accurately measured.An AR-coated 1.31 μm InGaAsP superluminescent diode with oxide stripe structure has been successfully developed.

关 键 词：减反射膜 等离子体增强化学气相沉积 低反射率 

分 类 号：TN304.055[电子电信—物理电子学]