不对称的法布里—泊洛GaAs/GaAlAs光反射调制器——工作机理及发展趋势  

Asymmetric Fabry - Perot GaAs/GaAIAs Multiple Quantum Well Optical Reflection Modulators

作　　者：冷静[1] A.Dimoulas M.Androulidaki 

机构地区：[1]华东船舶工业学院 [2]希腊研究技术基金会

出　　处：《华东船舶工业学院学报》1993年第3期22-22,共1页Journal of East China Shipbuilding Institute(Natural Science Edition)

摘　　要：本文介绍并讨论一种新型的光—电子器件—不对称的法布里—泊洛GaAs/GaAlAs多重量子阱光反射调制器.其工作原理是基于法布里—泊洛空腔的特性及量子阱中的QCSE效应,其工作状态有“常接通”和“常断开”两种模式.此外还介绍了在Si衬底上生长的此类器件的新进展.The optoelectronic devices, asymmetric Fabry-Perot GaAs/GaAlAs multiple quantum well optical reflection modulators (AFPM) ,are introduced and discussed. The operating mechanism of the devices is based on the asymmetric Fabry-Perot cavity and the Quantum Confined Stark Effect associated with quantum well structures. AFPM can be designed to operate in two modes: Normally-on and Normally-off. The new development of AFPM grown on silicon substrate is discussed as well.

关 键 词：超晶格半导体 斯塔克效应 限制态 

分 类 号：TN36[电子电信—物理电子学]