电子镇流器控制器中带隙基准源的设计与实现  

Design of Band-gap Voltage Reference Source of the Ballast Controller

作　　者：余有灵[1] 许维胜[1] 吴启迪[1] 

机构地区：[1]同济大学半导体与信息技术研究所,上海200092

出　　处：《半导体技术》2004年第11期61-64,共4页Semiconductor Technology

基　　金：2001年度AM资助项目(0101)

摘　　要：根据电子镇流器控制器对基准电源的设计要求,利用不同电流密度下两晶体管基极-发射极电压差的正温度特性,通过镜像电流源方式产生PTAT(proportional to absolute temperature)电流,再结合基极-发射极电压本身的负温度特性产生的电流,形成带隙基准电流源。仿真结果表明,该基准源的性能指标能满足系统设计的要求。From the requirements of ballast and the positive temperature characteristics of thevoltage difference of the base-emitter of two transistors, the PTAT current is produced by mirrorcurrent source and this is combined with the current produced by the negative temperature of thevoltage of the base-emitter of transistor, then the bandgap current reference source is derived. Thesimulation results show its voltage and temperature performances can meet the design requirements.

关 键 词：发射极 带隙基准源 基极 晶体管 镜像电流源 仿真结果 温度特性 电子镇流器 电压 控制器 

分 类 号：TN432[电子电信—微电子学与固体电子学] TM923[电气工程—电力电子与电力传动]