InGaP/GaAs双结太阳电池的研制  

DESIGN AND FABRICATION OF InGaP/GaAsDUALJUNCTION SOLAR CELLS

作　　者：张永刚[1] 刘天东[1] 胡雨生[1] 朱诚[1] 南矿军[1] 洪婷[1] 李爱珍[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《太阳能学报》2004年第5期620-623,共4页Acta Energiae Solaris Sinica

摘　　要：报导了自行研制的InGaP/GaAs双结太阳电池,电池的转换效率在21%～24%之间(1AM0,28℃),填充因子在79%～82%之间。文中对其材料结构设计、器件工艺制作以及性能测量表征等方面的问题进行了讨论。The design and fabrication of InGaP/GaAs dual-junction tandem solar cells were reported. Efficiency between 21%-24% (AMO, 28°C) and filling factor between 79%-82% have been measured. The problems related to material structure design, device processing as well as performance characterization also have been discussed.

关 键 词：光伏 串接太阳电池 化合物半导体 INGAP/GAAS 

分 类 号：TK514[动力工程及工程热物理—热能工程]