Al/GaAs表面量子阱界面层的原位光调制反射光谱研究  

In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well

作　　者：袁先漳[1] 缪中林[2] 

机构地区：[1]温州师范学院物理与电子信息学院,温州325027 [2]中国科学院上海技术物理研究所,红外物理国家实验室,上海200083

出　　处：《物理学报》2004年第10期3521-3524,共4页Acta Physica Sinica

摘　　要：用分子束外延 (MBE)方法在GaAs表面量子阱上外延生长不同厚度的Al层 ,以超高真空下的原位光调制光谱(PR)作为测量手段 ,研究Al扩散形成的表面势垒层对于GaAs表面量子阱中带间跃迁峰位和峰形的影响 .根据跃迁峰的变化 ,采用有效质量近似理论计算出了Al和GaAs的互扩散长度为 0 5nm 。We have studied the optical properties of the interface of Al and GaAs surface quantum well by in-situ photoreflectance (PR) spectroscopy in a molecular beam epitaxy (MBE) system. The intermixing of Al and GaAs surface quantum wells forms an Al_xGa_(1-x)As barrier layer on GaAs, which would shift the inter_band transition peaks of the GaAs quantum well. Based on the calculation using effective mass approximate method, we find that the intermixing length is 0.5nm, which is an important parameter in semiconductor technology.

关 键 词：量子阱 光调制 MBE 分子束外延 半导体工艺 表面势垒 外延生长 有效质量 近似 峰形 

分 类 号：TN304[电子电信—物理电子学]