引晶技术在HgCdTe体单晶生长中的应用  

TiP—seeding Technique Applied in Bulk Growth of HgCdTe Single Crystal

作　　者：郎维和 张宝峰 杜冰 张学仁 

机构地区：[1]华北光电所,北京100015

出　　处：《激光与红外》1993年第6期37-39,36,共4页Laser & Infrared

摘　　要：本文论述引入籽晶技术定向生长HgCdTe体单晶,通过石英管相对于加热器的缓慢移动来使熔区移过均匀的合成锭达到晶体生长的目的。其结构完整性及组分均匀性得到改善,并且电参数优良。已制出多元光导及光伏器件。Tip—seeding technique for oriented bulk growth HgCdTe single crystal is reported. With the aim of crystal growth,melt zone pass through the well—distributed source material by moving the silica ampoule slowly relatively to the heater. The grown crystal has the expected compositional homogeneity and perfect crystalline structure with good electronic parameters,and has been used to make varieties of high performance infrared detectors.

关 键 词：HGCDTE晶体 电子通道 生长 引晶 

分 类 号：TN304.054[电子电信—物理电子学]