弹性散射截面对计算电子束投影成像衬度的影响  

Use of Mott cross section in the simulation of electron scattering and transmission through mask in a projection lithography system

作　　者：浦其荣[1] 丁泽军[1] 孙霞[1] 吴自勤[1] 

机构地区：[1]中国科学技术大学结构分析重点实验室天文与应用物理系,安徽合肥230026

出　　处：《电子显微学报》2004年第5期571-574,共4页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.10025420;20075026;90206009);教育部博士点基金资助项目.

摘　　要：我们采用蒙特卡洛方法模拟了100keV电子通过W Cr Si3N4掩膜的透射率。发现在此高能量下,电子弹性散射的Mott截面与经典的Rutherford截面仍有较大差异。由于这两种总截面和小角散射的微分截面不同,因此采用何种截面将直接影响限角散射电子束投影成像的模拟结果。本文通过比较电子透射的实验测量和模拟计算结果,确认了使用Mott截面的必要性。We have employed Mott cross section for electron elastic scattering in a Monte Carlo simulation of electron scattering and transmission through W/Cr/Si_3N_4 membrane masks.It was found that this quantum mechanical cross section deviates from the classical Rutherford cross section at energy even as high as 100 keV.This difference,not only on the total cross section but also on the differential cross section in the small angular range(θ<3°) affects the contrast simulation for scattering with angular limitation in projection electron lithography(SCALPEL).In this paper a comparison on the contrast and electron transmission between an experiment and simulation results has been made.

关 键 词：总截面 电子弹性散射 微分截面 弹性散射截面 投影 透射 蒙特卡洛方法 r/S 高能量 成像 

分 类 号：O562[理学—原子与分子物理]