InGaAsP/InP异质界面的X射线双晶衍射测量  

The Measurement on the Interface of InGaAsP/InP Research with Double Crystal X-ray Diffraction

作　　者：卢革宇[1] 王贤仁[1] 苗忠礼 程强 关一民 

机构地区：[1]吉林大学电子科学系,长春130023

出　　处：《吉林大学自然科学学报》1993年第3期61-63,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：本文利用X射线双晶衍射测量LPE生长的InGaAsP/InP异质结的R-C曲线,得到了异质结的垂直失配和水平失配.在考虑存在失配位错的情况下,计算了驰豫晶格失配、曲率半径和失配位错密度.指出了影响外延层R-C曲线半峰宽的因素.The X-ray Rocking Curve of InGaAsP/InP was measured with double crystal X-ray diffraction. The vertical mismatch and parallel mismatch were obtained. In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated. The factors which inflence on the half-width of Rocking curve were given.

关 键 词：界面 双晶衍射 X射线 异质结 

分 类 号：TN307[电子电信—物理电子学]