掺氮类金刚石薄膜的电化学C-V研究  

Analysis of Nitrogen-Doped Diamond-Like Carbon Films by ElectrochemicalC-V Me thod

作　　者：程翔[1] 陈朝[1] 徐富春[1] 刘铁林 

机构地区：[1]厦门大学物理系,厦门361005 [2]深圳市纳诺材料技术研究所,深圳518048

出　　处：《Journal of Semiconductors》2004年第10期1264-1268,共5页半导体学报（英文版）

摘　　要：采用射频等离子体增强化学气相沉积 (RF- PECVD)法携带 N2 或 NH3制备掺氮的类金刚石 (DL C∶ N)薄膜 ,对不同掺杂方法得到 DL C∶ N薄膜进行电化学 C- V测量 .I- V和 C- V曲线表明 ,不论是采用 N2 或是 NH3进行掺杂都得到 n型的 DL C薄膜 ,掺 NH3的样品载流子浓度能达到更高 .根据样品的电化学 C- V测量结果并结合 X射线光电子能谱 ,详细研究了 DL C∶ N薄膜载流子浓度的纵向分布 。Nitrogen-doped diamond-like carbon films are d e posited by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD ).The electrochemical capacitance-voltage (C-V) profiler is used to study the effect of doping nitrogen on diamond-like carbon films by two kinds of dif ferent source gases including nitrogen.With the analysis of the electrochemical C-V profile and the current-voltage (I-V) characteristics curve,the n-type diamond-like carbon films can be obtained by either N 2 or NH 3 doped.The density of carriers in the samples doped by NH 3 is higher up t o 10 18cm -3.With the electrochemical C-V and the X-ray photoel ectron spectra (XPS),it is discussed that the density longitudinal distribution of carriers in the DLC∶N films with the depth.The peak of N-doped concentratio n distribution is at the DLC∶N films-substrate interface,the growth initial st ages.

关 键 词：掺氮类金刚石薄膜 电化学C—V X射线光电子能谱 

分 类 号：TN304.18[电子电信—物理电子学]