测量InGaAsP/InP异质界面的化学斜面法  

Chemical Bevel Method for Measuring the Interfaceof InGaAsP/InP

作　　者：卢革宇[1] 王贤仁[1] 苗忠礼 关一民 程强 

机构地区：[1]吉林大学电子工程系,长春130023

出　　处：《吉林大学自然科学学报》1993年第4期53-56,共4页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：本文利用AES(俄歇电子能谱)测量了InGaAsP/InP异质界面的组分分布和界面宽度,提出了化学斜面法测量界面宽度的新方法.同时讨论了晶格失配对界面宽度的影响.The present paper covers the measurement of interface width of InGaAsP/InP. AES chemical bevel, a new method of measuring interface width, has been described. The method improves the precision of the measurement. The effect of lattice mismatch between the quar-ternary layer and the substrate has been also discussed.

关 键 词：化学斜面法 界面 异质结 半导体 

分 类 号：TN304.26[电子电信—物理电子学]