在室温条件下制备高质量纳米结构TiN薄膜研究  

Deposition of High Quality TiN Thin Films with Nano-structure

作　　者：闫鹏勋[1] 吴志国[1] 徐建伟[1] 张玉娟 张伟伟[1] 刘伟民[2] 

机构地区：[1]兰州大学等离子体与金属材料研究所,兰州730000 [2]中国科学院兰州化学物理研究所固体润滑国家重点实验室,兰州730000

出　　处：《无机材料学报》2004年第6期1386-1390,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(10074022);教育部优秀青年教师资助计划

摘　　要：在室温条件下,利用磁过滤等离子体在单晶硅和不锈钢表面上制备了性能优异的纳米结构TiN薄膜.运用原子力显微镜和掠角入射X射线衍射仪对其结构与形貌进行了表征,利用纳米压痕仪测量了TiN薄膜的硬度和弹性模量.结果表明:TiN薄膜表面光滑,致密,无柱状晶;TiN晶粒的平均尺寸为50nm,薄膜硬度达50 GPa,是传统CVD和PVD技术沉积氮化钛的两倍多;XRD衍射试验表明,纳米TiN的衍射角都普遍向小角度移动,TiN晶粒沿(111)择优生长.Nano-structure TiN thin films with excellent properties were deposited on the silicon wafer and stainless steel substrate under room temperature by a filtered cathode arc plasma technique. The structure and morphology of the films were characterized by atomic force microscopy (AFM) and small angle X-ray diffractometer (XRD), and it's hardness and elastic mouldness were measured by nano-indenter. Research results show that the TiN thin. films are highly uniform, very smooth, dense and droplet-phase-free. The average grain size of the films is 50nm, and it's hardness is up to 50GPa that is about two times of that deposited by conventional CVD and PVD techniques. XRD analysis demonstrates that the diffraction peaks of the TiN films move to small angle, and the films display a preferred orientation along plane (111).

关 键 词：TIN 磁过滤等离子体 纳米薄膜 

分 类 号：TB43[一般工业技术]